t4 - lds - 0016 - 1, rev . 1 (111682) ?2011 microsemi corporation page 1 of 6 2n3506l thru 2n3507al available on commercial versions npn med ium power silicon transistor qualified per mil - prf - 19500/3 49 qualified levels : jan, jantx and jantxv description this family of 2n3 506l through 2n3507al high - fr equency, epitaxial planar transistors feature low saturation voltage. these devices are also available in to -5 and low profile u4 packaging. microsemi also offers numerous other transistor products to meet higher and lower power ratings with various swit ching speed requirements in both through - hole and surface - mount packages. to - 5 package also available in : to - 39 (to - 205 - ad) package (leaded) 2n3506 C 2n3507a u4 package (surface mount) 2n3506u4 C 2n3507au4 important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n3 506 through 2n3 5 07 series. ? rohs compliant versions available (commercial grade only) . ? v ce (sat) = 0.5 v @ i c = 500 ma. ? rise time t r = 30 n s max @ i c = 1.5 a, i b1 = 150 ma . ? fall time t f = 35 n s max @ i c = 1.5 a, i b1 = i b2 = 150 ma . applications / benefits ? ge neral purpose transistors for medium power applications requiring high frequency switc hing and low package profile. ? military and other high - reliability applications. maximum ratings msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +35 3 (0) 65 6822298 website: www.microsemi.com parameters / test conditions symbol 2n3 506 l 2n3 507 l unit collector - emitter voltage v ceo 40 50 v collector -ba se voltage v cbo 60 80 v emitter - base voltage v ebo 5.0 v thermal resistance junction - to - ambient r ? ja 175 o c/w thermal resistance junction - to - case r ? jc 18 o c/w collector current i c 3.0 a total power dissipation @ t a = +25 c (1) @ t c = + 110 c (2) p d 1 .0 5 .0 w operating & storage junction temperature range t j , t stg - 65 to +200 c notes : 1. derate linearly 5.7 1 mw/c for t a > +25 c. 2. derate linearly 55.5 mw/c for t c > + 110 c. downloaded from: http:///
t4 - lds - 0016 - 1, rev . 1 (111682) ?2011 microsemi corporation page 2 of 6 2n3506l thru 2n3507al mechanical and packaging ? case: hermetically sealed, k ovar base, n ickel cap. ? terminals: leads are k ov ar, n ickel plated, and finish is solder dip (sn63/pb37). can be rohs compliant (commercial grade only) with pure matte tin (commercial grade only) . ? marking: part number, d ate c ode, m anufacturers id. ? polarity: npn (see package outline). ? weight: approximately 1.14 grams. ? see p ackage d imensions on last page. part nomenclature jan 2n3 506 a l (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = commercial jedec type number (see electrical characteristic s table) rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant long - lead ed level impr ovement a = 2 v gain specification @ - 55 c blank = 1 v gain specification @ - 55 c symbols & definitions symbol definition c obo c ommon - base open - circuit output capacitance . i ceo c ollector cutoff current, base open . i cex c ollector cutoff current, c ircuit between base and emitter . i ebo e mitter cutoff current, collector open . h fe c ommon - emitter static forward current transfer ratio . v ceo c ollector - emitter voltage, base open . v cbo c ollector - emitter voltage, emitter open . v ebo e mitter - base voltage, collector open . downloaded from: http:///
t4 - lds - 0016 - 1, rev . 1 (111682) ?2011 microsemi corporation page 3 of 6 2n3506l thru 2n3507al electrical characteristics (t a = +25c, unless otherwise noted) off characteristics parameters / test conditions symbol min. max. unit collector - emitter breakdown voltage v (br)ceo 40 50 v i c = 10 ma 2n3506 l 2n3507 l collecto r- emitter cutoff current i cex 1.0 1.0 a v ce = 40 v ; v eb = 4 v v ce = 60 v ; v eb = 4 v 2n3506 l 2n3507 l collector - base breakdown voltage i c = 100 a 2n3506 l 2n3507 l v (br)cbo 60 80 v emitter - base breakdown voltage i e = 10 a v (br)ebo 5 v on cha racteristics (1) parameters / test conditions symbol min. max. unit forward- current transfer ratio i c = 500 ma, v ce = 1 v 2n3506 l 2n3507 l h fe 50 35 250 175 forward- current transfer ratio i c = 1.5 a, v ce = 2 v 2n3506 l 2n3507 l h fe 40 30 200 150 forward- current transfer ratio i c = 2.5 a, v ce = 3 v 2n3506 l 2n3507 l h fe 30 25 forward- current transfer ratio i c = 3.0 a, v ce = 5 v 2n3506 l 2n3507 l h fe 25 20 forward- current transfer ratio i c = 500 ma, v ce = 1.0 v @ - 55 o c 2n3506 l 2n3507 l h fe 25 17 forwa rd- current transfer ratio i c = 500 ma, v ce = 2.0 v @ - 55 o c 2n3506 al 2n3507 al h fe 25 17 collector - emitter saturation voltage i c = 500 ma, i b = 50 ma v ce(sat) 0.5 v collector - emitter saturation voltage i c = 1.5 a, i b = 150 ma v ce(sat) 1.0 v collec tor - emitter saturation voltage i c = 2.5 a, i b = 250 ma v ce(sat) 1.5 v base- emitter saturation voltage i c = 500 ma, i b = 50 ma v be(sat) 1.0 v base- emitter saturation voltage i c = 1.5 a , i b = 150 ma v be(sat) 0.8 1.3 v base- emitter saturation voltage i c = 2.5 a, i b = 250 ma v be(sat) 2.0 v (1) pulse test: pulse width = 300 s, d uty c ycle 2.0%. downloaded from: http:///
t4 - lds - 0016 - 1, rev . 1 (111682) ?2011 microsemi corporation page 4 of 6 2n3506l thru 2n3507al electrical characteristics (t a = +25c, unless otherwise noted) dynamic characteristics parameters / test conditions symbol min. max. unit magnitu de of common emitter small - signal short - circuit forward current transfer ratio i c = 100 ma, v ce = 5vdc, f = 20 mhz |h fe | 3.0 15 output capacitance v cb = 10 v, i e = 0, 100 khz f 1.0 mhz c obo 40 pf input capacitance v eb = 3.0 v, i c = 0, 100 khz f 1.0 mhz c ibo 300 pf switching characteristics (2) parameters / test conditions symbol min. max. unit delay time i c = 1.5 a, i b1 = 150 ma t d 15 ns rinse time i c = 1.5 a, i b1 = 150 ma t r 30 ns storage time i c = 1.5 a, i b1 = i b2 = 150 ma t s 55 ns fall time i c = 1.5 a, i b1 = i b2 = 150 ma t f 35 ns (2 ) consult mil - prf - 19500/349 f or a dditional i nfornation. downloaded from: http:///
t4 - lds - 0016 - 1, rev . 1 (111682) ?2011 microsemi corporation page 5 of 6 2n3506l thru 2n3507al graphs t c ( o c ) (case) figure 1 temperature - power derating curve note: thermal resistance junction to case = 18 .0 o c/w .1 10 -5 .1 10 -4 .1 10 -3 .1 10 -2 .1 10 -1 0.1 1 10 100 time (s) figure 2 maximum thermal impedance (r ? jc ) dc operation maximum rating (w) theta ( o c /w) legend (top to bottom) v ce = 6 v v ce = 10 v v ce = 20 v v ce = 40 v v ce = 60 v downloaded from: http:///
t4 - lds - 0016 - 1, rev . 1 (111682) ?2011 microsemi corporation page 6 of 6 2n3506l thru 2n3507al package dimensions notes: 1. dimension are in inches. 2. millime ters are given for general information only. 3. beyond r (radius) maximum, th shall be held for a minimum length of .011 (0.28 mm). 4. dimension tl measured from maximum hd. 5. body contour optional within zone defined by hd, cd, and q. 6. leads at gauge plane .054 +.001 - .000 inch (1.37 +0.03 - 0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mm c. 7. dimension lu applies between l1 and l2. dimension ld applies between l2 and ll minimum. diameter is uncontrolled in l1 and beyond ll minimum. 8. all three leads. 9. the collector shall be internally connected to the case. 10. dimension r (radius) applies to both inside corners of tab. 11. d imen sion ll shall be 1.5 inches (38.1mm) minimum and 1.75 inches (44.4 mm) maxim um. 12. in accordance with asme y14.5m, diameters are equivalent to x symbology. 13 . lead 1 = emitter, lead 2 = base, lead 3 = collector. dimensions symbol inches millimeters note min max min max cd 0 .305 0 .335 7.75 8.51 ch 0 .240 0 .260 6.10 6.60 hd 0 .335 0 .370 8.51 9.40 lc 0 .200 tp 5.08 tp 6 ld 0 .016 0.021 0.41 0.53 7, 8 ll see note s 7, 8, 11 lu 0 .016 0 .019 0.41 0.48 7, 8 l1 0 .050 1.27 7, 8 l2 0 .250 6.35 7, 8 p 0 .100 2.54 5 q 0.050 1.27 4 tl 0 .029 0 .045 0.74 1.14 3 tw 0 .028 0 .034 0.71 0.86 2 r 0 .010 0.25 10 45 tp 45 tp 6 downloaded from: http:///
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